SI3585DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

REACH SVHC :

Unknown

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

SI3585

Nominal Vgs :

600 mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Element Configuration :

Dual

Threshold Voltage :

600mV

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Type :

N and P-Channel

Max Power Dissipation :

830mW

Radiation Hardening :

No

Rise Time :

34ns

Power Dissipation :

830mW

Height :

1mm

Number of Terminations :

6

Continuous Drain Current (ID) :

19A

Gate to Source Voltage (Vgs) :

12V

Current - Continuous Drain (Id) @ 25°C :

2A 1.5A

Resistance :

200mOhm

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 4.5V

Pin Count :

6

Terminal Finish :

MATTE TIN

Length :

3.1mm

Pbfree Code :

yes

Turn On Delay Time :

11 ns

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.4A, 4.5V

Vgs(th) (Max) @ Id :

600mV @ 250μA (Min)

Fall Time (Typ) :

34 ns

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain to Source Breakdown Voltage :

20V

Turn-Off Delay Time :

19 ns

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Number of Pins :

6

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Width :

1.7mm

Mount :

Surface Mount

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

2A