SI3585DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 4.5V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rise Time :

34ns

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.4A, 4.5V

Width :

1.7mm

Vgs(th) (Max) @ Id :

600mV @ 250μA (Min)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

6

FET Type :

N and P-Channel

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

2A 1.5A

Continuous Drain Current (ID) :

19A

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

2A

Element Configuration :

Dual

Threshold Voltage :

600mV

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Power Dissipation :

830mW

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Length :

3.1mm

Mount :

Surface Mount

Fall Time (Typ) :

34 ns

Max Power Dissipation :

830mW

Gate to Source Voltage (Vgs) :

12V

Turn On Delay Time :

11 ns

Series :

TrenchFET®

Radiation Hardening :

No

Resistance :

200mOhm

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

SI3585

Nominal Vgs :

600 mV

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Lead Free :

Lead Free

Turn-Off Delay Time :

19 ns

Pbfree Code :

yes

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

REACH SVHC :

Unknown

Height :

1mm

Operating Temperature :

-55°C~150°C TJ