SI3552DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Channels :

2

Time@Peak Reflow Temperature-Max (s) :

30

Weight :

19.986414mg

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Published :

2013

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Max Power Dissipation :

1.15W

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

Nominal Vgs :

1 V

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 5V

Packaging :

Tape and Reel (TR)

FET Type :

N and P-Channel

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

Power Dissipation :

1.15W

Base Part Number :

SI3552

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

105m Ω @ 2.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

1V

Drain to Source Voltage (Vdss) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Pbfree Code :

yes

Radiation Hardening :

No

Number of Terminations :

6

Pin Count :

6

FET Feature :

Logic Level Gate

Terminal Finish :

Matte Tin (Sn)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Continuous Drain Current (ID) :

2.5A

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.105Ohm

Number of Pins :

6

Terminal Form :

Gull wing

REACH SVHC :

Unknown