SI3529DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Resistance :

215mOhm

Rise Time :

38ns

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

40V

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

40V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Input Capacitance :

205pF

Number of Pins :

6

Series :

TrenchFET®

Turn-Off Delay Time :

10 ns

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

205pF @ 20V

Rds On Max :

125 mΩ

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mount :

Surface Mount

Power - Max :

1.4W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.4W

Power Dissipation :

1.15W

Vgs(th) (Max) @ Id :

3V @ 250µA

Published :

2016

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

FET Type :

N and P-Channel

Supplier Device Package :

6-TSOP

Element Configuration :

Dual

Fall Time (Typ) :

38 ns

Continuous Drain Current (ID) :

1.95A

Rds On (Max) @ Id, Vgs :

125mOhm @ 2.2A, 10V

Current - Continuous Drain (Id) @ 25°C :

2.5A 1.95A

FET Feature :

Logic Level Gate