NTE236

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Mfr.Part #
NTE236
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
RF TRANS NPN 25V TO220
Stock
1
In Stock :
1

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - RF
Series :
-
ECCN Code :
EAR99
Mounting Type :
Through Hole
Package / Case :
TO-226-3, TO-92-3 Long Body
Emitter Base Voltage (VEBO) :
6 V
Polarity/Channel Type :
NPN
Max Collector Current :
4 A
Collector Base Voltage (VCBO) :
60 V
RoHS :
Compliant
Transistor Type :
NPN
Subcategory :
Other Transistors
HTS Code :
8541.29.00.75
Reach Compliance Code :
Unknown
Power - Max :
1 W
Surface Mount :
No
Product Status :
Active
Terminal Position :
BOTTOM
Collector Emitter Voltage (VCEO) :
50 V
Package :
Bag
Operating Temperature :
150°C (TJ)
Qualification Status :
Not Qualified
Voltage - Collector Emitter Breakdown (Max) :
50 V
Number of Elements :
1
Transistor Application :
SWITCHING
Collector-Emitter Voltage-Max :
50 V
Package Shape :
Round
Collector Current-Max (IC) :
2 A
Number of Terminals :
3
Vce Saturation (Max) @ Ib, Ic :
400mV @ 50mA, 1A
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 100mA, 2V
Configuration :
Single
Supplier Device Package :
TO-92L
Max Operating Temperature :
150 °C
Transistor Element Material :
SILICON
Number of Pins :
3
Manufacturer :
NTE Electronics
Frequency - Transition :
150MHz
Power Dissipation-Max (Abs) :
1 W
JESD-30 Code :
O-PBCY-T3
Terminal Form :
THROUGH-HOLE
Current - Collector (Ic) (Max) :
2 A
DC Current Gain-Min (hFE) :
40
Min Operating Temperature :
-55 °C
Mount :
Through Hole
Datasheets
NTE236
Introducing Transistors - Bipolar (BJT) - RF NTE Electronics, Inc. NTE236 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 Long Body, Operating Temperature:150°C (TJ), Number of Pins:3, NTE236 pinout, NTE236 datasheet PDF, NTE236 amp .Beyond Transistors - Bipolar (BJT) - RF NTE Electronics, Inc. NTE236 ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE236


NPN 150°C (TJ) 100nA (ICBO) 1 Elements SILICON NPN TO-226-3, TO-92-3 Long Body Through Hole

NTE2363 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 100mA, 2V.When VCE saturation is 400mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6 V can achieve high levels of efficiency.Supplier package TO-92L contains the product.Voltage maximal between collector and emitter is set to 50 V.The device has a 50 V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 4 A volts can be achieved.

NTE2363 Features


the DC current gain for this device is 140 @ 100mA, 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6 V
the supplier device package of TO-92L


NTE2363 Applications


There are a lot of NTE Electronics, Inc
NTE2363 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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