NTE236

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Frequency - Transition :

150MHz

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

50 V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 50mA, 1A

Transistor Application :

SWITCHING

Number of Elements :

1

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

50 V

Min Operating Temperature :

-55 °C

Power - Max :

1 W

Collector-Emitter Voltage-Max :

50 V

Series :

-

Surface Mount :

No

Subcategory :

Other Transistors

DC Current Gain-Min (hFE) :

40

Product Status :

Active

Mount :

Through Hole

Collector Current-Max (IC) :

2 A

Current - Collector (Ic) (Max) :

2 A

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Max Collector Current :

4 A

Configuration :

Single

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

140 @ 100mA, 2V

Collector Base Voltage (VCBO) :

60 V

Manufacturer :

NTE Electronics

Package :

Bag

Reach Compliance Code :

Unknown

JESD-30 Code :

O-PBCY-T3

HTS Code :

8541.29.00.75

Max Operating Temperature :

150 °C

Number of Terminals :

3

Supplier Device Package :

TO-92L

Number of Pins :

3

Package Shape :

Round

Transistor Type :

NPN

Terminal Form :

THROUGH-HOLE

Current - Collector Cutoff (Max) :

100nA (ICBO)

Package / Case :

TO-226-3, TO-92-3 Long Body

Terminal Position :

BOTTOM

Power Dissipation-Max (Abs) :

1 W

Transistor Element Material :

SILICON

RoHS :

Compliant

Emitter Base Voltage (VEBO) :

6 V