NTE235

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

NPN

Type :

NPN

Supplier Device Package :

TO-220

Operating Temp Range :

-55C to 150C

Power - Max :

1.2W

Package / Case :

TO-220-3

Surface Mount :

No

Transistor Type :

NPN

Terminal Form :

THROUGH-HOLE

Collector Current-Max (IC) :

3 A

Number of Terminals :

3

Package Type :

TO-220

Manufacturer :

NTE Electronics

DC Current Gain-Min (hFE) :

25

Subcategory :

Other Transistors

HTS Code :

8541.29.00.75

Qualification Status :

Not Qualified

Noise Figure (dB Typ @ f) :

-

Case Connection :

COLLECTOR

Reach Compliance Code :

Unknown

Collector Current (DC) :

5(A)

Collector-Base Voltage :

80(V)

Gain :

-

Voltage - Collector Emitter Breakdown (Max) :

75V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

12 W

JEDEC-95 Code :

TO-220AB

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 500mA, 5V

Current - Collector (Ic) (Max) :

3A

JESD-30 Code :

R-PSFM-T3

Configuration :

Single

Package Shape :

RECTANGULAR

Emitter-Base Voltage :

5(V)

Frequency - Transition :

150MHz

Mounting Type :

Through Hole

Pin Count :

3

Product Status :

Active

Number of Elements :

1

Series :

-

Package :

Bag

Operating Temperature :

150°C (TJ)

Output Power :

4(MIN)(W)

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Power Dissipation :

1.2(W)

Power Dissipation Ambient-Max :

12 W