NTE23

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

DC Current Gain-Min (hFE) :

5

JESD-30 Code :

R-PSFM-T3

Voltage - Collector Emitter Breakdown (Max) :

800 V

Power - Max :

70 W

Collector Current (DC) :

8(A)

Surface Mount :

No

Supplier Device Package :

TO-3PML

Frequency - Transition :

-

Collector Current-Max (IC) :

8 A

Product Status :

Active

Transistor Type :

NPN

HTS Code :

8541.29.00.95

Series :

-

Subcategory :

Other Transistors

Configuration :

Single

DC Current Gain :

8@1A@5V/5@6A@5V

Collector-Base Voltage :

1500(V)

Power Dissipation Ambient-Max :

70 W

Current - Collector Cutoff (Max) :

1mA

Manufacturer :

NTE Electronics

Power Dissipation-Max (Abs) :

70 W

Operating Temperature :

150°C (TJ)

Number of Terminals :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Additional Feature :

High Reliability

Terminal Form :

THROUGH-HOLE

Package :

Bag

Qualification Status :

Not Qualified

Operating Temperature Classification :

Military

Package / Case :

TO-3P-3 Full Pack

Rad Hardened :

No

Transistor Application :

AMPLIFIER

Current - Collector (Ic) (Max) :

8 A

Case Connection :

Isolated

Package Shape :

RECTANGULAR

Polarity/Channel Type :

NPN

Emitter-Base Voltage :

6(V)

Pin Count :

3 +Tab

Output Power :

Not Required(W)

Terminal Position :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 1A, 5V

ECCN Code :

EAR99

Category :

Bipolar Power

Transistor Element Material :

SILICON

Mounting :

Through Hole

Collector-Emitter Voltage-Max :

800 V

Vce Saturation (Max) @ Ib, Ic :

5V @ 1.2A, 6A

Mounting Type :

Through Hole

Operating Temp Range :

-55C to 150C

Transistor Polarity :

NPN

Power Dissipation :

70(W)