MS1051

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Base Voltage (VCBO) :

36V

Max Collector Current :

20A

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 5mA 5V

Collector Emitter Breakdown Voltage :

18V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Number of Elements :

1

Number of Pins :

4

Max Frequency :

30MHz

Transistor Application :

AMPLIFIER

Published :

2003

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Number of Terminations :

4

Package / Case :

M174

Highest Frequency Band :

HIGH FREQUENCY B

Frequency - Transition :

30MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Additional Feature :

WITH EMITTER BALLASTING RESISTORS

Terminal Finish :

TIN LEAD

Packaging :

Bulk

Collector Emitter Voltage (VCEO) :

18V

Max Power Dissipation :

290W

Radiation Hardening :

No

Transistor Element Material :

SILICON

Terminal Position :

Radial

Pin Count :

4

Operating Temperature :

200°C TJ

Configuration :

Single

Mount :

Chassis Mount, Screw

Terminal Form :

Flat

Mounting Type :

Chassis Mount

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Pbfree Code :

No

Gain :

11dB ~ 13dB