MS1003

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Max Repetitive Reverse Voltage (Vrrm) :

30V

Collector-Base Capacitance-Max :

390pF

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 5A 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Gain :

6dB

Transistor Element Material :

SILICON

JESD-30 Code :

O-PXFM-F6

Max Collector Current :

20A

Element Configuration :

Common Cathode

RoHS Status :

RoHS Compliant

Terminal Finish :

TIN LEAD

ECCN Code :

EAR99

Number of Terminations :

6

Additional Feature :

WITH EMITTER BALLASTED RESISTORS

Published :

2004

Factory Lead Time :

12 Weeks

Pbfree Code :

No

Mount :

Surface Mount, Through Hole

Transistor Type :

NPN

JESD-609 Code :

e0

Frequency - Transition :

136MHz~175MHz

Operating Temperature :

200°C TJ

Terminal Form :

Flat

Peak Non-Repetitive Surge Current :

225A

Packaging :

Bulk

Power - Max :

270W

Terminal Position :

UNSPECIFIED

Lifecycle Status :

Obsolete (Last Updated: 1 month ago)

Collector Emitter Breakdown Voltage :

18V

Highest Frequency Band :

VERY HIGH FREQUENCY B

Peak Reverse Current :

250μA

Package / Case :

M111

Max Power Dissipation :

270W

Forward Current :

10A

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Pin Count :

3

Number of Elements :

1