MS1003

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Peak Reverse Current :

250μA

Collector-Base Capacitance-Max :

390pF

Transistor Type :

NPN

RoHS Status :

RoHS Compliant

Highest Frequency Band :

VERY HIGH FREQUENCY B

Radiation Hardening :

No

JESD-30 Code :

O-PXFM-F6

Terminal Finish :

TIN LEAD

Pin Count :

3

Pbfree Code :

No

JESD-609 Code :

e0

Forward Current :

10A

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Max Repetitive Reverse Voltage (Vrrm) :

30V

Number of Elements :

1

Lifecycle Status :

Obsolete (Last Updated: 1 month ago)

Number of Terminations :

6

Mount :

Surface Mount, Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 5A 5V

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Common Cathode

Frequency - Transition :

136MHz~175MHz

Terminal Position :

UNSPECIFIED

Package / Case :

M111

Additional Feature :

WITH EMITTER BALLASTED RESISTORS

Gain :

6dB

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Max Power Dissipation :

270W

Packaging :

Bulk

Published :

2004

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

18V

ECCN Code :

EAR99

Peak Non-Repetitive Surge Current :

225A

Max Collector Current :

20A

Operating Temperature :

200°C TJ

Power - Max :

270W