MS1006
- Mfr.Part #
- MS1006
- Manufacturer
- Microsemi
- Package / Case
- M135
- Datasheet
- Download
- Description
- RF TRANS NPN 55V 30MHZ M135
- Stock
- 24,201
- In Stock :
- 24,201
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Additional Feature :
- LOW POWER LOSS, REVERSE ENERGY TESTED
- Rep Pk Reverse Voltage-Max :
- 60V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Diode Element Material :
- SILICON
- Forward Voltage-Max :
- 0.67V
- Reach Compliance Code :
- Compliant
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-220
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- M135
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- Voltage - Collector Emitter Breakdown (Max) :
- 55V
- Packaging :
- Bulk
- Reverse Current-Max :
- 250μA
- HTS Code :
- 8541.10.00.80
- Mounting Type :
- Stud Mount
- Gain :
- 14dB
- ECCN Code :
- EAR99
- Non-rep Pk Forward Current-Max :
- 225A
- Number of Phases :
- 1
- Case Connection :
- CATHODE
- Qualification Status :
- Not Qualified
- Surface Mount :
- No
- Power - Max :
- 127W
- Frequency - Transition :
- 30MHz
- Pin Count :
- 4
- JESD-30 Code :
- R-PSFM-T2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Output Current-Max :
- 10A
- Application :
- EFFICIENCY
- Current - Collector (Ic) (Max) :
- 3.25A
- Diode Type :
- RECTIFIER DIODE
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 19 @ 1.4A 6V
- Operating Temperature :
- 200°C
- Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MS1006
MS1006 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Microsemi Corporation stock available at
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