MS1006

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Additional Feature :

LOW POWER LOSS, REVERSE ENERGY TESTED

Packaging :

Bulk

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

3.25A

Case Connection :

CATHODE

Gain :

14dB

Package / Case :

M135

Reach Compliance Code :

Compliant

Application :

EFFICIENCY

Number of Elements :

1

Terminal Position :

Single

Forward Voltage-Max :

0.67V

Operating Temperature :

200°C

RoHS Status :

RoHS Compliant

Terminal Form :

THROUGH-HOLE

Transistor Type :

NPN

Pbfree Code :

yes

Power - Max :

127W

Pin Count :

4

Surface Mount :

No

Qualification Status :

Not Qualified

Output Current-Max :

10A

Number of Terminations :

2

Rep Pk Reverse Voltage-Max :

60V

Diode Type :

RECTIFIER DIODE

Reverse Current-Max :

250μA

JEDEC-95 Code :

TO-220

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

55V

HTS Code :

8541.10.00.80

DC Current Gain (hFE) (Min) @ Ic, Vce :

19 @ 1.4A 6V

Non-rep Pk Forward Current-Max :

225A

Diode Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Mounting Type :

Stud Mount

Number of Phases :

1

Frequency - Transition :

30MHz

JESD-30 Code :

R-PSFM-T2