MS1001

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Base Voltage (VCBO) :

36V

Number of Terminations :

4

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

20A

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5A 5V

Highest Frequency Band :

HIGH FREQUENCY B

Radiation Hardening :

No

Gain :

13dB

Additional Feature :

WITH DIFFUSED EMITTER RESISTORS

Operating Temperature :

200°C TJ

Pbfree Code :

No

Frequency - Transition :

30MHz

Number of Pins :

4

Terminal Finish :

TIN LEAD

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Mounting Type :

Chassis Mount

Power - Max :

270W

JESD-609 Code :

e0

Configuration :

Single

Pin Count :

4

Transistor Application :

AMPLIFIER

Number of Elements :

1

Mount :

Chassis Mount, Screw

Collector Emitter Voltage (VCEO) :

18V

Transistor Element Material :

SILICON

Package / Case :

M174

Transistor Type :

NPN

Terminal Position :

Radial

Packaging :

Bulk

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Collector Emitter Breakdown Voltage :

18V

Polarity/Channel Type :

NPN

Published :

2003

Max Power Dissipation :

270W