MS1001

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5A 5V

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

18V

Package / Case :

M174

Transistor Element Material :

SILICON

Pin Count :

4

Max Collector Current :

20A

Published :

2003

Mounting Type :

Chassis Mount

Terminal Position :

Radial

Number of Terminations :

4

Frequency - Transition :

30MHz

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

18V

Gain :

13dB

Radiation Hardening :

No

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Collector Base Voltage (VCBO) :

36V

Additional Feature :

WITH DIFFUSED EMITTER RESISTORS

Mount :

Chassis Mount, Screw

Number of Elements :

1

Max Power Dissipation :

270W

Number of Pins :

4

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN LEAD

Power - Max :

270W

Pbfree Code :

No

Packaging :

Bulk

Transistor Application :

AMPLIFIER

JESD-609 Code :

e0

RoHS Status :

RoHS Compliant

Operating Temperature :

200°C TJ

Highest Frequency Band :

HIGH FREQUENCY B