MS1004

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Power - Max :

330W

Max Repetitive Reverse Voltage (Vrrm) :

40V

Collector Emitter Breakdown Voltage :

55V

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 10A 6V

Mount :

Chassis Mount, Through Hole

Number of Elements :

1

Radiation Hardening :

No

Number of Terminations :

4

Lifecycle Status :

Obsolete (Last Updated: 1 month ago)

Terminal Finish :

TIN LEAD

Frequency - Transition :

30MHz

Element Configuration :

Common Cathode

Terminal Position :

Radial

Published :

2003

Operating Temperature :

200°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Transistor Element Material :

SILICON

Packaging :

Bulk

JESD-30 Code :

O-PRFM-F4

Forward Current :

10A

Peak Reverse Current :

250μA

JESD-609 Code :

e0

Mounting Type :

Chassis Mount

Highest Frequency Band :

VERY HIGH FREQUENCY B

Terminal Form :

Flat

Max Power Dissipation :

330W

Package / Case :

M177

Collector-Base Capacitance-Max :

360pF

Peak Non-Repetitive Surge Current :

225A

Pin Count :

3

Pbfree Code :

No

Max Collector Current :

40A

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Additional Feature :

High Reliability

Gain :

14.5dB