MS1007

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Form :

Flat

Max Power Dissipation :

233W

Transistor Element Material :

SILICON

Pin Count :

4

Terminal Position :

Radial

Collector Base Voltage (VCBO) :

110V

JESD-609 Code :

e0

Frequency - Transition :

30MHz

Highest Frequency Band :

HIGH FREQUENCY B

Collector Emitter Breakdown Voltage :

55V

Pbfree Code :

No

Published :

2003

RoHS Status :

RoHS Compliant

Mount :

Chassis Mount, Screw

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

Polarity/Channel Type :

NPN

Configuration :

Single

Number of Pins :

4

Packaging :

Bulk

Collector-Base Capacitance-Max :

220pF

Number of Terminations :

4

Collector Emitter Voltage (VCEO) :

55V

Operating Temperature :

200°C TJ

Mounting Type :

Chassis Mount

Additional Feature :

WITH EMITTER BALLASTING RESISTORS

Transistor Type :

NPN

ECCN Code :

EAR99

Max Collector Current :

10A

Number of Elements :

1

Transistor Application :

AMPLIFIER

Output Power :

150W

Lead Free :

Lead Free

Package / Case :

M174

Max Frequency :

30MHz

Terminal Finish :

TIN LEAD

DC Current Gain (hFE) (Min) @ Ic, Vce :

18 @ 1.4A 6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Gain :

14dB