MS1007

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Breakdown Voltage :

55V

Gain :

14dB

Packaging :

Bulk

Pbfree Code :

No

JESD-609 Code :

e0

Radiation Hardening :

No

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

Additional Feature :

WITH EMITTER BALLASTING RESISTORS

Max Collector Current :

10A

Number of Pins :

4

Configuration :

Single

Highest Frequency Band :

HIGH FREQUENCY B

Output Power :

150W

Terminal Form :

Flat

RoHS Status :

RoHS Compliant

Terminal Finish :

TIN LEAD

Package / Case :

M174

Terminal Position :

Radial

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Published :

2003

Collector Base Voltage (VCBO) :

110V

Max Power Dissipation :

233W

Transistor Element Material :

SILICON

Max Frequency :

30MHz

Number of Terminations :

4

Collector-Base Capacitance-Max :

220pF

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

55V

Pin Count :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

18 @ 1.4A 6V

Transistor Type :

NPN

Frequency - Transition :

30MHz

Mounting Type :

Chassis Mount

Mount :

Chassis Mount, Screw

Transistor Application :

AMPLIFIER

Operating Temperature :

200°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1