MJD45H11RL

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

JESD-609 Code :

e3

Width :

6.22mm

Halogen Free :

Halogen Free

Transistor Application :

SWITCHING

Gain Bandwidth Product :

90MHz

Published :

2005

ECCN Code :

EAR99

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

Power Dissipation :

1.75W

Surface Mount :

yes

Lead Free :

Lead Free

Factory Lead Time :

8 Weeks

Transition Frequency :

90MHz

Height :

2.38mm

Transistor Type :

PNP

hFE Min :

60

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

1V

Mounting Type :

Surface Mount

Polarity/Channel Type :

PNP

Collector Base Voltage (VCBO) :

5V

Case Connection :

COLLECTOR

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Collector Current :

8A

Current - Collector Cutoff (Max) :

1μA

Number of Pins :

3

Number of Terminations :

2

Max Power Dissipation :

20W

Max Breakdown Voltage :

80V

Pin Count :

3

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-80V

Length :

6.73mm

Base Part Number :

MJD45H11

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Collector Emitter Breakdown Voltage :

80V

Current Rating :

-8A

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Contact Plating :

Tin

Frequency :

90MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 4A 1V

Emitter Base Voltage (VEBO) :

5V

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

80V