MJD42CG
- Mfr.Part #
- MJD42CG
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 6A DPAK
- Stock
- 110,126
- In Stock :
- 110,126
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Current Rating :
- -6A
- Max Collector Current :
- 6A
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Power Dissipation :
- 1.75W
- Transition Frequency :
- 3MHz
- Case Connection :
- COLLECTOR
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 3MHz
- Transistor Application :
- SWITCHING
- Width :
- 6.223mm
- Frequency :
- 3MHz
- Collector Emitter Saturation Voltage :
- 1.5V
- Length :
- 6.7056mm
- Current - Collector Cutoff (Max) :
- 50μA
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- REACH SVHC :
- No SVHC
- Height :
- 2.3876mm
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Weight :
- 4.535924g
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation :
- 1.75W
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Termination :
- SMD/SMT
- Voltage - Rated DC :
- -100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Surface Mount :
- yes
- hFE Min :
- 15
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Published :
- 2006
- Number of Terminations :
- 2
- Base Part Number :
- MJD42
- Collector Base Voltage (VCBO) :
- 100V
- Datasheets
- MJD42CG

PNP -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD42CG Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
MJD42CG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz
MJD42CG Applications
There are a lot of ON Semiconductor
MJD42CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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