MJD41CRL
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- Mfr.Part #
- MJD41CRL
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS POWER NPN 6A 100V DPAK
- Stock
- 1,032
- In Stock ：
- 1,032
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 6A
- Max Breakdown Voltage :
- 100V
- Number of Terminations :
- 2
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 3MHz
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- hFE Min :
- 30
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 8 Weeks
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 18 hours ago)
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- MJD41
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1.75W
- Collector Emitter Saturation Voltage :
- 1.5V
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50μA
- Power Dissipation :
- 1.75W
- Published :
- 2006
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Current Rating :
- 6A
- Operating Temperature :
- -65°C~150°C TJ
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Datasheets
- MJD41CRL
NPN -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD41CRLG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 6A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 6A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
MJD41CRLG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJD41CRLG Applications
There are a lot of ON Semiconductor
MJD41CRLG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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