MJD41CRL
- Mfr.Part #
- MJD41CRL
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS POWER NPN 6A 100V DPAK
- Stock
- 1,032
- In Stock :
- 1,032
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Frequency :
- 3MHz
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Power Dissipation :
- 1.75W
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 1.5V
- Published :
- 2006
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 6A
- Current - Collector Cutoff (Max) :
- 50μA
- Collector Emitter Voltage (VCEO) :
- 100V
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 18 hours ago)
- Factory Lead Time :
- 8 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Gain Bandwidth Product :
- 3MHz
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 30
- Max Breakdown Voltage :
- 100V
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-30 Code :
- R-PSSO-G2
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -65°C~150°C TJ
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Max Collector Current :
- 6A
- Base Part Number :
- MJD41
- Transition Frequency :
- 3MHz
- Max Power Dissipation :
- 1.75W
- Datasheets
- MJD41CRL
MJD41CRL Documents

NPN -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD41CRLG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 6A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 6A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
MJD41CRLG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJD41CRLG Applications
There are a lot of ON Semiconductor
MJD41CRLG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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