MJD42C1
- Mfr.Part #
- MJD42C1
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 6A IPAK
- Stock
- 11,857
- In Stock :
- 11,857
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -6A
- Max Collector Current :
- 6A
- Voltage - Rated DC :
- -100V
- Frequency :
- 3MHz
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 100V
- Pbfree Code :
- yes
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Transition Frequency :
- 3MHz
- Collector Base Voltage (VCBO) :
- 100V
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 50μA
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.75W
- Collector Emitter Voltage (VCEO) :
- 100V
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSIP-T3
- Number of Pins :
- 4
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- MJD42
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 100V
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Gain Bandwidth Product :
- 3MHz
- Max Power Dissipation :
- 1.75W
- Published :
- 2006
- Datasheets
- MJD42C1

PNP -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD42C1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 15 @ 3A 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 6A volts.
MJD42C1G Features
the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz
MJD42C1G Applications
There are a lot of ON Semiconductor
MJD42C1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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