MJD42C1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

100V

Base Part Number :

MJD42

Number of Pins :

4

ECCN Code :

EAR99

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

100V

Gain Bandwidth Product :

3MHz

Operating Temperature :

-65°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

100V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Transistor Type :

PNP

Number of Elements :

1

Case Connection :

COLLECTOR

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

1.75W

Pin Count :

4

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Current Rating :

-6A

Element Configuration :

Single

Published :

2006

Max Power Dissipation :

1.75W

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

50μA

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

6A

Frequency :

3MHz

JESD-30 Code :

R-PSIP-T3

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

8 Weeks

Transition Frequency :

3MHz

Voltage - Rated DC :

-100V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Surface Mount :

No

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Polarity/Channel Type :

PNP

Collector Emitter Voltage (VCEO) :

100V