MJD42C1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

JESD-30 Code :

R-PSIP-T3

Max Power Dissipation :

1.75W

Case Connection :

COLLECTOR

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

50μA

ECCN Code :

EAR99

Pbfree Code :

yes

Radiation Hardening :

No

Transition Frequency :

3MHz

Polarity/Channel Type :

PNP

Element Configuration :

Single

Lead Free :

Lead Free

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Breakdown Voltage :

100V

Gain Bandwidth Product :

3MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Power Dissipation :

1.75W

Number of Pins :

4

Pin Count :

4

Packaging :

Tube

Factory Lead Time :

8 Weeks

Published :

2006

Frequency :

3MHz

Number of Elements :

1

JESD-609 Code :

e3

Max Breakdown Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Transistor Application :

SWITCHING

Base Part Number :

MJD42

Surface Mount :

No

Emitter Base Voltage (VEBO) :

5V

Current Rating :

-6A

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Transistor Type :

PNP

Collector Emitter Voltage (VCEO) :

100V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Voltage - Rated DC :

-100V

RoHS Status :

ROHS3 Compliant

Max Collector Current :

6A

Collector Base Voltage (VCBO) :

100V