MJD42CRL
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- Mfr.Part #
- MJD42CRL
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 6A DPAK
- Stock
- 34,560
- In Stock ：
- 34,560
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 2.38mm
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Power Dissipation :
- 1.75W
- Power Dissipation :
- 1.75W
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 50μA
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-G2
- Polarity/Channel Type :
- PNP
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- JESD-609 Code :
- e3
- Current Rating :
- -6A
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Transition Frequency :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Width :
- 6.22mm
- Collector Emitter Breakdown Voltage :
- 100V
- Voltage - Rated DC :
- -100V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Base Part Number :
- MJD42
- Published :
- 2006
- hFE Min :
- 30
- Collector Emitter Saturation Voltage :
- 1.5V
- Max Collector Current :
- 6A
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 3MHz
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 100V
- Length :
- 6.73mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 22 Weeks
- Datasheets
- MJD42CRL
PNP -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD42CRLG Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
MJD42CRLG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz
MJD42CRLG Applications
There are a lot of ON Semiconductor
MJD42CRLG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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