MJD41CRLG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

30

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

8 Weeks

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Power Dissipation :

1.75W

Current - Collector Cutoff (Max) :

50μA

Max Breakdown Voltage :

100V

Case Connection :

COLLECTOR

Frequency :

3MHz

Published :

2006

Transistor Type :

NPN

Collector Emitter Saturation Voltage :

1.5V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Max Collector Current :

6A

Transistor Application :

SWITCHING

Max Power Dissipation :

1.75W

Radiation Hardening :

No

Number of Terminations :

2

Lead Free :

Lead Free

Gain Bandwidth Product :

3MHz

Current Rating :

6A

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Pbfree Code :

yes

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

100V

Base Part Number :

MJD41

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN

Transition Frequency :

3MHz

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Breakdown Voltage :

100V

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

100V

Voltage - Rated DC :

100V