MJD41CT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

6A

Max Breakdown Voltage :

100V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Width :

6.22mm

Factory Lead Time :

19 Weeks

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transition Frequency :

3MHz

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

Published :

2006

Mounting Type :

Surface Mount

Radiation Hardening :

No

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Max Power Dissipation :

1.75W

Lifecycle Status :

ACTIVE (Last Updated: 8 hours ago)

Pin Count :

3

Surface Mount :

yes

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

100V

Current - Collector Cutoff (Max) :

50μA

Current Rating :

6A

Gain Bandwidth Product :

3MHz

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Emitter Base Voltage (VEBO) :

5V

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

1.5V

Height :

2.38mm

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN

Number of Elements :

1

Element Configuration :

Single

Voltage - Rated DC :

100V

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

100V

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

100V

Length :

6.73mm

Operating Temperature :

-65°C~150°C TJ

REACH SVHC :

No SVHC

Frequency :

3MHz

Base Part Number :

MJD41

Number of Terminations :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Lead Free :

Lead Free

hFE Min :

30

Power Dissipation :

1.75W