MJD41CT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Pin Count :

3

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

100V

Pbfree Code :

yes

Max Breakdown Voltage :

100V

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Collector Emitter Breakdown Voltage :

100V

Number of Pins :

3

Case Connection :

COLLECTOR

Max Collector Current :

6A

Operating Temperature :

-65°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Power Dissipation :

1.75W

Polarity/Channel Type :

NPN

Length :

6.73mm

Collector Base Voltage (VCBO) :

100V

Transistor Application :

SWITCHING

Width :

6.22mm

Transition Frequency :

3MHz

Height :

2.38mm

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Published :

2006

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Voltage - Rated DC :

100V

REACH SVHC :

No SVHC

Frequency :

3MHz

Transistor Type :

NPN

Factory Lead Time :

19 Weeks

Max Power Dissipation :

1.75W

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 8 hours ago)

Current Rating :

6A

hFE Min :

30

Number of Terminations :

2

Transistor Element Material :

SILICON

Base Part Number :

MJD41

Emitter Base Voltage (VEBO) :

5V

Terminal Form :

Gull wing

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

3MHz

Element Configuration :

Single

Current - Collector Cutoff (Max) :

50μA

Collector Emitter Saturation Voltage :

1.5V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant