MJD41CTF
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- Mfr.Part #
- MJD41CTF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A TO252AA
- Stock
- 7,642
- In Stock ：
- 7,642
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 10μA
- hFE Min :
- 15
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- RoHS Status :
- RoHS Compliant
- Frequency :
- 3MHz
- Length :
- 6.6mm
- Base Part Number :
- MJD41
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 6A
- Max Power Dissipation :
- 1.75W
- Published :
- 2001
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1.5V
- Height :
- 2.3mm
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Current Rating :
- 6A
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 100V
- Collector Base Voltage (VCBO) :
- 100V
- Factory Lead Time :
- 15 Weeks
- Width :
- 6.1mm
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSSO-G2
- Gain Bandwidth Product :
- 3MHz
- Weight :
- 260.37mg
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 1.75W
- Collector Emitter Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Voltage - Rated DC :
- 100V
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- MJD41CTF
MJD41CTF Documents
NPN 150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD41CTF Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
MJD41CTF Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJD41CTF Applications
There are a lot of ON Semiconductor
MJD41CTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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