MJD41CTF
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- Mfr.Part #
- MJD41CTF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A TO252AA
- Stock
- 7,642
- In Stock ：
- 7,642
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1.75W
- RoHS Status :
- RoHS Compliant
- Factory Lead Time :
- 15 Weeks
- Weight :
- 260.37mg
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Number of Terminations :
- 2
- Collector Emitter Breakdown Voltage :
- 100V
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- hFE Min :
- 15
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 100V
- Gain Bandwidth Product :
- 3MHz
- Transition Frequency :
- 3MHz
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1.75W
- Collector Base Voltage (VCBO) :
- 100V
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 100V
- Transistor Application :
- AMPLIFIER
- Current Rating :
- 6A
- Collector Emitter Saturation Voltage :
- 1.5V
- Width :
- 6.1mm
- Pbfree Code :
- yes
- Frequency :
- 3MHz
- Max Collector Current :
- 6A
- Element Configuration :
- Single
- Base Part Number :
- MJD41
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 10μA
- Height :
- 2.3mm
- Voltage - Rated DC :
- 100V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Number of Elements :
- 1
- Length :
- 6.6mm
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- JESD-30 Code :
- R-PSSO-G2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2001
- Datasheets
- MJD41CTF
NPN 150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD41CTF Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
MJD41CTF Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJD41CTF Applications
There are a lot of ON Semiconductor
MJD41CTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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