MJD41CT4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

3MHz

Gain Bandwidth Product :

3MHz

REACH SVHC :

No SVHC

Pbfree Code :

yes

Max Collector Current :

6A

Collector Emitter Breakdown Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

1.75W

Current Rating :

6A

Published :

2006

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

19 Weeks

Transistor Element Material :

SILICON

Operating Temperature :

-65°C~150°C TJ

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 8 hours ago)

Base Part Number :

MJD41

JESD-30 Code :

R-PSSO-G2

Max Breakdown Voltage :

100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transition Frequency :

3MHz

Terminal Form :

Gull wing

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

100V

Case Connection :

COLLECTOR

Number of Terminations :

2

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

hFE Min :

30

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Length :

6.73mm

Power Dissipation :

1.75W

Voltage - Rated DC :

100V

Pin Count :

3

Height :

2.38mm

Current - Collector Cutoff (Max) :

50μA

Number of Pins :

3

Collector Base Voltage (VCBO) :

100V

Transistor Type :

NPN

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1.5V

Number of Elements :

1

Width :

6.22mm