MJD41CT4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-30 Code :

R-PSSO-G2

Collector Emitter Saturation Voltage :

1.5V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

3MHz

Transition Frequency :

3MHz

Collector Emitter Voltage (VCEO) :

100V

Height :

2.38mm

Voltage - Rated DC :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Pin Count :

3

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Operating Temperature :

-65°C~150°C TJ

Contact Plating :

Tin

Max Collector Current :

6A

Lead Free :

Lead Free

Published :

2006

Mounting Type :

Surface Mount

Number of Elements :

1

Transistor Application :

SWITCHING

Transistor Type :

NPN

Frequency :

3MHz

Terminal Form :

Gull wing

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

50μA

Lifecycle Status :

ACTIVE (Last Updated: 8 hours ago)

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Number of Terminations :

2

Current Rating :

6A

Element Configuration :

Single

Length :

6.73mm

Max Breakdown Voltage :

100V

Surface Mount :

yes

Width :

6.22mm

Base Part Number :

MJD41

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Collector Base Voltage (VCBO) :

100V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1.75W

Factory Lead Time :

19 Weeks

hFE Min :

30

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

100V

Power Dissipation :

1.75W

Case Connection :

COLLECTOR