MJD44H11TF
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- Mfr.Part #
- MJD44H11TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 80V 8A DPAK
- Stock
- 16,817
- In Stock ：
- 16,817
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 260.37mg
- Gain Bandwidth Product :
- 50MHz
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- MJD44H11
- Current Rating :
- 8A
- Factory Lead Time :
- 6 Weeks
- Width :
- 6.1mm
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 60
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Collector Current :
- 8A
- Collector Base Voltage (VCBO) :
- 80V
- Height :
- 2.3mm
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Max Power Dissipation :
- 1.75W
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 80V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pbfree Code :
- yes
- Length :
- 6.6mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Published :
- 2009
- Element Configuration :
- Single
- Power Dissipation :
- 1.75W
- Voltage - Rated DC :
- 80V
- Transition Frequency :
- 50MHz
- Current - Collector Cutoff (Max) :
- 10μA
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Pins :
- 3
- Datasheets
- MJD44H11TF
NPN 150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD44H11TF Overview
In this device, the DC current gain is 40 @ 4A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
MJD44H11TF Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz
MJD44H11TF Applications
There are a lot of ON Semiconductor
MJD44H11TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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