MJD44E3T4
- Mfr.Part #
- MJD44E3T4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PWR DARL NPN 10A 80V DPAK
- Stock
- 14,243
- In Stock :
- 14,243
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- NPN
- Max Breakdown Voltage :
- 80V
- Current - Collector Cutoff (Max) :
- 10μA
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Case Connection :
- COLLECTOR
- Height :
- 2.38mm
- Weight :
- 4.535924g
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 10A
- Number of Pins :
- 3
- Max Power Dissipation :
- 1.75W
- Factory Lead Time :
- 5 Weeks
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- MJD44
- Element Configuration :
- Single
- Width :
- 6.22mm
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Voltage (VCEO) :
- 80V
- Voltage - Rated DC :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Surface Mount :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 10A
- Length :
- 6.73mm
- Published :
- 2005
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN - Darlington
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 5V
- hFE Min :
- 1000
- Collector Emitter Saturation Voltage :
- 1.5V
- Halogen Free :
- Halogen Free
- Pin Count :
- 3
- Current Rating :
- 10A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Contact Plating :
- Tin
- Datasheets
- MJD44E3T4

NPN - Darlington -55°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD44E3T4G Overview
DC current gain in this device equals 1000 @ 5A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 20mA, 10A.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 10A current rating.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 10A volts.
MJD44E3T4G Features
the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 2V @ 20mA, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 10A
MJD44E3T4G Applications
There are a lot of ON Semiconductor
MJD44E3T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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