MJD350T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Contact Plating :

Tin

Pbfree Code :

yes

Height :

2.38mm

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

JESD-609 Code :

e3

Surface Mount :

yes

Transition Frequency :

10MHz

Power Dissipation :

1.56W

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Collector Base Voltage (VCBO) :

300V

Current Rating :

-500mA

Packaging :

Cut Tape (CT)

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Operating Temperature :

-65°C~150°C TJ

Number of Pins :

3

Emitter Base Voltage (VEBO) :

3V

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

1V

Transistor Type :

PNP

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Published :

2005

Current - Collector Cutoff (Max) :

100μA

Max Power Dissipation :

1.56W

Lifecycle Status :

ACTIVE (Last Updated: 7 hours ago)

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Case Connection :

COLLECTOR

Transistor Application :

SWITCHING

Max Breakdown Voltage :

300V

Max Collector Current :

500mA

Length :

6.73mm

Voltage - Rated DC :

-300V

RoHS Status :

ROHS3 Compliant

Width :

6.22mm

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

300V

hFE Min :

30

Number of Terminations :

2

Collector Emitter Voltage (VCEO) :

300V

Lead Free :

Lead Free

Weight :

4.535924g

REACH SVHC :

No SVHC

Base Part Number :

MJD350

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 50mA 10V

ECCN Code :

EAR99