MJD350T4

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Mfr.Part #
MJD350T4
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 300V 0.5A DPAK
Stock
1,643
In Stock :
1,643

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-30 Code :
R-PSSO-G2
Length :
6.6mm
Power Dissipation :
15W
Pin Count :
3
Collector Base Voltage (VCBO) :
300V
Max Collector Current :
500mA
Packaging :
Cut Tape (CT)
Collector Emitter Breakdown Voltage :
300V
Lifecycle Status :
ACTIVE (Last Updated: 6 months ago)
Polarity/Channel Type :
PNP
RoHS Status :
ROHS3 Compliant
Base Part Number :
MJD35
Width :
6.2mm
Case Connection :
COLLECTOR
Factory Lead Time :
8 Weeks
Number of Elements :
1
Lead Free :
Lead Free
Current - Collector Cutoff (Max) :
100μA ICBO
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
30
Max Power Dissipation :
15W
Peak Reflow Temperature (Cel) :
260
Current Rating :
-500mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 50mA 10V
Element Configuration :
Single
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Mount :
Surface Mount
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Type :
PNP
Radiation Hardening :
No
hFE Min :
30
Operating Temperature :
150°C TJ
Transistor Application :
SWITCHING
Voltage - Rated DC :
-300V
Number of Terminations :
2
Number of Pins :
3
Max Breakdown Voltage :
300V
Terminal Finish :
Matte Tin (Sn) - annealed
Height :
2.4mm
REACH SVHC :
No SVHC
Emitter Base Voltage (VEBO) :
3V
Mounting Type :
Surface Mount
Collector Emitter Voltage (VCEO) :
300V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
MJD350T4
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics MJD350T4 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJD35, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:150°C TJ, Number of Terminations:2, Number of Pins:3, Mounting Type:Surface Mount, MJD350T4 pinout, MJD350T4 datasheet PDF, MJD350T4 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics MJD350T4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics MJD350T4


PNP 150°C TJ 100μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount

MJD350T4 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 50mA 10V.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.

MJD350T4 Features


the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 3V
the current rating of this device is -500mA


MJD350T4 Applications


There are a lot of STMicroelectronics
MJD350T4 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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