MJD350T4

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Mfr.Part #
MJD350T4
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 300V 0.5A DPAK
Stock
1,643
In Stock :
1,643

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Power Dissipation :
15W
Mounting Type :
Surface Mount
Terminal Finish :
Matte Tin (Sn) - annealed
Emitter Base Voltage (VEBO) :
3V
Operating Temperature :
150°C TJ
Time@Peak Reflow Temperature-Max (s) :
30
Mount :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Pin Count :
3
Current Rating :
-500mA
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
300V
Transistor Type :
PNP
REACH SVHC :
No SVHC
Transistor Element Material :
SILICON
Packaging :
Cut Tape (CT)
Radiation Hardening :
No
JESD-609 Code :
e3
Width :
6.2mm
Collector Emitter Voltage (VCEO) :
300V
Length :
6.6mm
Lead Free :
Lead Free
Case Connection :
COLLECTOR
Number of Pins :
3
Terminal Form :
Gull wing
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 50mA 10V
Voltage - Rated DC :
-300V
Max Collector Current :
500mA
Collector Base Voltage (VCBO) :
300V
Lifecycle Status :
ACTIVE (Last Updated: 6 months ago)
Height :
2.4mm
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
100μA ICBO
Factory Lead Time :
8 Weeks
Max Power Dissipation :
15W
Peak Reflow Temperature (Cel) :
260
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Terminations :
2
Max Breakdown Voltage :
300V
hFE Min :
30
Base Part Number :
MJD35
Polarity/Channel Type :
PNP
Datasheets
MJD350T4
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics MJD350T4 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Base Part Number:MJD35, MJD350T4 pinout, MJD350T4 datasheet PDF, MJD350T4 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics MJD350T4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics MJD350T4


PNP 150°C TJ 100μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount

MJD350T4 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 50mA 10V.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.

MJD350T4 Features


the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 3V
the current rating of this device is -500mA


MJD350T4 Applications


There are a lot of STMicroelectronics
MJD350T4 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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