MJD350T4
- Mfr.Part #
- MJD350T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A DPAK
- Stock
- 1,643
- In Stock :
- 1,643
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSSO-G2
- Length :
- 6.6mm
- Power Dissipation :
- 15W
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 300V
- Max Collector Current :
- 500mA
- Packaging :
- Cut Tape (CT)
- Collector Emitter Breakdown Voltage :
- 300V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 months ago)
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- MJD35
- Width :
- 6.2mm
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Power Dissipation :
- 15W
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- -500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- hFE Min :
- 30
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- -300V
- Number of Terminations :
- 2
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 300V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Height :
- 2.4mm
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 3V
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MJD350T4
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PNP 150°C TJ 100μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
MJD350T4 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 50mA 10V.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MJD350T4 Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 3V
the current rating of this device is -500mA
MJD350T4 Applications
There are a lot of STMicroelectronics
MJD350T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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