MJD350G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Form :

Gull wing

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

300V

Emitter Base Voltage (VEBO) :

3V

Power Dissipation :

1.56W

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Max Power Dissipation :

1.56W

Operating Temperature :

-65°C~150°C TJ

Collector Base Voltage (VCBO) :

300V

Transistor Type :

PNP

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Max Collector Current :

500mA

RoHS Status :

RoHS Compliant

Number of Pins :

3

Transition Frequency :

10MHz

Packaging :

Tube

Transistor Element Material :

SILICON

Current Rating :

-500mA

Transistor Application :

SWITCHING

Surface Mount :

yes

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR

Qualification Status :

Not Qualified

Collector Emitter Voltage (VCEO) :

300V

Current - Collector Cutoff (Max) :

100μA

Pin Count :

3

Terminal Finish :

Tin (Sn)

Width :

6.223mm

Number of Terminations :

2

Base Part Number :

MJD350

JESD-30 Code :

R-PSSO-G2

Length :

6.7056mm

Voltage - Rated DC :

-300V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 50mA 10V

Collector Emitter Saturation Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

2.3876mm

Element Configuration :

Single

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

hFE Min :

30

Lead Free :

Lead Free

Published :

2000