MJD340TF
- Mfr.Part #
- MJD340TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A DPAK
- Stock
- 27,559
- In Stock :
- 27,559
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Power Dissipation :
- 1.56W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 30
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 300V
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Base Part Number :
- MJD340
- Current - Collector Cutoff (Max) :
- 100μA
- Terminal Form :
- Gull wing
- RoHS Status :
- RoHS Compliant
- Published :
- 2001
- Emitter Base Voltage (VEBO) :
- 3V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Width :
- 6.1mm
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 15W
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 300V
- REACH SVHC :
- No SVHC
- Current Rating :
- 500mA
- Weight :
- 260.37mg
- Voltage - Rated DC :
- 300V
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 300V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Max Collector Current :
- 500mA
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN
- Height :
- 2.3mm
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 300V
- Length :
- 6.6mm
- Datasheets
- MJD340TF

NPN 150°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD340TF Overview
In this device, the DC current gain is 30 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Keeping the emitter base voltage at 3V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).An input voltage of 300V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
MJD340TF Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 3V
the current rating of this device is 500mA
MJD340TF Applications
There are a lot of ON Semiconductor
MJD340TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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