MJD340
- Mfr.Part #
- MJD340
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A DPAK
- Stock
- 42,766
- In Stock :
- 42,766
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Max Collector Current :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Breakdown Voltage :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.56W
- Operating Temperature :
- -65°C~150°C TJ
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Emitter Base Voltage (VEBO) :
- 3V
- Packaging :
- Tube
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 1V
- Height :
- 2.3876mm
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 6.223mm
- Voltage - Rated DC :
- 300V
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Max Power Dissipation :
- 15W
- Element Configuration :
- Single
- Max Frequency :
- 10MHz
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100μA
- Surface Mount :
- yes
- Collector Emitter Voltage (VCEO) :
- 300V
- Collector Base Voltage (VCBO) :
- 300V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Published :
- 2003
- Current Rating :
- 500mA
- Number of Terminations :
- 2
- Length :
- 6.7056mm
- JESD-30 Code :
- R-PSSO-G2
- Base Part Number :
- MJD340
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- hFE Min :
- 30
- Datasheets
- MJD340

NPN -65°C~150°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD340G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Emitter base voltages of 3V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.A maximum collector current of 500mA volts can be achieved.
MJD340G Features
the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the emitter base voltage is kept at 3V
the current rating of this device is 500mA
MJD340G Applications
There are a lot of ON Semiconductor
MJD340G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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