MJD32RLG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

1.56W

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Max Collector Current :

3A

Gain Bandwidth Product :

3MHz

Voltage - Rated DC :

-40V

Transistor Type :

PNP

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Frequency :

3MHz

Collector Emitter Breakdown Voltage :

40V

Terminal Finish :

Tin (Sn)

Operating Temperature :

-65°C~150°C TJ

Power Dissipation :

1.56W

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Current Rating :

-3A

Current - Collector Cutoff (Max) :

50μA

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Collector Emitter Saturation Voltage :

1.2V

Pin Count :

3

Base Part Number :

MJD32

Published :

2005

hFE Min :

25

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

8 Weeks

Number of Pins :

3

ECCN Code :

EAR99

Lead Free :

Lead Free

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Transition Frequency :

3MHz

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

40V

Collector Emitter Voltage (VCEO) :

40V

Radiation Hardening :

No