MJD32CTF
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- Mfr.Part #
- MJD32CTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A TO252-3
- Stock
- 32,356
- In Stock ：
- 32,356
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 3MHz
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 3MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1.56W
- Pbfree Code :
- yes
- Frequency :
- 3MHz
- Contact Plating :
- Tin
- Height :
- 2.3mm
- hFE Min :
- 10
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Lead Free :
- Lead Free
- Base Part Number :
- MJD32
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 6 Weeks
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Published :
- 2001
- Max Collector Current :
- 3A
- Number of Pins :
- 3
- Current Rating :
- -3A
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Length :
- 6.6mm
- Voltage - Rated DC :
- -100V
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- -1.2V
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Type :
- PNP
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Base Voltage (VCBO) :
- -100V
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Power Dissipation :
- 1.56W
- Weight :
- 260.37mg
- Width :
- 6.1mm
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 100V
- Max Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 50μA
- Radiation Hardening :
- No
- Datasheets
- MJD32CTF
PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CTF Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.2V.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 3A volts is possible.
MJD32CTF Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CTF Applications
There are a lot of ON Semiconductor
MJD32CTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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