MJD32CTF
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- Mfr.Part #
- MJD32CTF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 32,356
- In Stock ：
- 32,356
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Max Power Dissipation :
- 1.56W
- Published :
- 2001
- Collector Emitter Voltage (VCEO) :
- 100V
- Length :
- 6.6mm
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1.56W
- hFE Min :
- 10
- Frequency :
- 3MHz
- Collector Emitter Saturation Voltage :
- -1.2V
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -100V
- Number of Elements :
- 1
- Base Part Number :
- MJD32
- Number of Terminations :
- 2
- Max Collector Current :
- 3A
- Emitter Base Voltage (VEBO) :
- -5V
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 3MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Voltage - Rated DC :
- -100V
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 50μA
- Collector Emitter Breakdown Voltage :
- 100V
- Max Breakdown Voltage :
- 100V
- Current Rating :
- -3A
- Width :
- 6.1mm
- Number of Pins :
- 3
- Element Configuration :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Factory Lead Time :
- 6 Weeks
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 3MHz
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Weight :
- 260.37mg
- Polarity/Channel Type :
- PNP
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 2.3mm
- Packaging :
- Tape and Reel (TR)
- Datasheets
- MJD32CTF
,%20SC-63.jpg)
PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CTF Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.2V.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 3A volts is possible.
MJD32CTF Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CTF Applications
There are a lot of ON Semiconductor
MJD32CTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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