MJD32CT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

100V

Emitter Base Voltage (VEBO) :

5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

REACH SVHC :

No SVHC

Transistor Application :

AMPLIFIER

Power Dissipation :

1.56W

Transition Frequency :

3MHz

Transistor Type :

PNP

Radiation Hardening :

No

Pin Count :

3

Collector Emitter Saturation Voltage :

1.2V

Mounting Type :

Surface Mount

Length :

6.73mm

Width :

6.22mm

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Current - Collector Cutoff (Max) :

50μA

Gain Bandwidth Product :

3MHz

Number of Pins :

3

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Max Collector Current :

3A

Published :

2001

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

-3A

Max Breakdown Voltage :

100V

Number of Elements :

1

hFE Min :

25

Frequency :

3MHz

Case Connection :

COLLECTOR

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Breakdown Voltage :

100V

ECCN Code :

EAR99

Weight :

4.535924g

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Termination :

SMD/SMT

Max Power Dissipation :

1.56W

Surface Mount :

yes

Base Part Number :

MJD32

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Height :

2.38mm

Contact Plating :

Tin

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Number of Terminations :

2

Element Configuration :

Single

Collector Base Voltage (VCBO) :

100V

Voltage - Rated DC :

-100V