MJD32CT4
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- Mfr.Part #
- MJD32CT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 5,081
- In Stock ：
- 5,081
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 8 Weeks
- Mount :
- Surface Mount
- Base Part Number :
- MJD32
- Height :
- 2.4mm
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Power Dissipation :
- 15W
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Length :
- 6.6mm
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 100V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- JEDEC-95 Code :
- TO-252AA
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- hFE Min :
- 20
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Width :
- 6.2mm
- Max Collector Current :
- 3A
- Weight :
- 4.535924g
- Pin Count :
- 3
- Max Power Dissipation :
- 15W
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 50μA
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Current Rating :
- -3A
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -1.2V
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -100V
- Number of Terminations :
- 2
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Max Breakdown Voltage :
- 100V
- Datasheets
- MJD32CT4
MJD32CT4 Documents
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PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CT4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.The collector emitter saturation voltage is -1.2V, which allows for maximum design flexibility.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
MJD32CT4 Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
MJD32CT4 Applications
There are a lot of STMicroelectronics
MJD32CT4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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