MJD32CT4
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- Mfr.Part #
- MJD32CT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 5,081
- In Stock ：
- 5,081
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-252AA
- Number of Terminations :
- 2
- hFE Min :
- 20
- Base Part Number :
- MJD32
- Element Configuration :
- Single
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Saturation Voltage :
- -1.2V
- Number of Pins :
- 3
- Height :
- 2.4mm
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Max Collector Current :
- 3A
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Voltage - Rated DC :
- -100V
- Width :
- 6.2mm
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Length :
- 6.6mm
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- Power Dissipation :
- 15W
- Pin Count :
- 3
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Power Dissipation :
- 15W
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 100V
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 50μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Current Rating :
- -3A
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Datasheets
- MJD32CT4
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PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CT4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.The collector emitter saturation voltage is -1.2V, which allows for maximum design flexibility.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
MJD32CT4 Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
MJD32CT4 Applications
There are a lot of STMicroelectronics
MJD32CT4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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