MJD32CT4
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- Mfr.Part #
- MJD32CT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 5,081
- In Stock ：
- 5,081
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50μA
- Collector Emitter Breakdown Voltage :
- 100V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-252AA
- Width :
- 6.2mm
- JESD-30 Code :
- R-PSSO-G2
- Length :
- 6.6mm
- Max Power Dissipation :
- 15W
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- -100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- hFE Min :
- 20
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 2
- Current Rating :
- -3A
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- MJD32
- Pin Count :
- 3
- Height :
- 2.4mm
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- Case Connection :
- COLLECTOR
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Max Collector Current :
- 3A
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 100V
- Weight :
- 4.535924g
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 15W
- Collector Emitter Saturation Voltage :
- -1.2V
- Collector Base Voltage (VCBO) :
- 100V
- Datasheets
- MJD32CT4
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PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CT4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.The collector emitter saturation voltage is -1.2V, which allows for maximum design flexibility.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
MJD32CT4 Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
MJD32CT4 Applications
There are a lot of STMicroelectronics
MJD32CT4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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