MJD32CG
- Mfr.Part #
- MJD32CG
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 5,041
- In Stock :
- 5,041
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 3MHz
- Collector Emitter Saturation Voltage :
- 1.2V
- Collector Base Voltage (VCBO) :
- 100V
- Height :
- 2.3876mm
- Factory Lead Time :
- 8 Weeks
- Base Part Number :
- MJD32
- Power Dissipation :
- 1.56W
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 3MHz
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material :
- SILICON
- Width :
- 6.223mm
- Terminal Form :
- Gull wing
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 25
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 50μA
- Collector Emitter Breakdown Voltage :
- 100V
- Current Rating :
- -3A
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Operating Temperature :
- -65°C~150°C TJ
- Length :
- 6.7056mm
- Number of Terminations :
- 2
- Max Power Dissipation :
- 1.56W
- Max Collector Current :
- 3A
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2001
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Weight :
- 4.535924g
- Voltage - Rated DC :
- -100V
- Frequency :
- 3MHz
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Datasheets
- MJD32CG

PNP -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD32CG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
MJD32CG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CG Applications
There are a lot of ON Semiconductor
MJD32CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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