MJD32C1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

6.2mm

RoHS Status :

ROHS3 Compliant

Max Collector Current :

3A

Max Breakdown Voltage :

100V

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Gain Bandwidth Product :

3MHz

Collector Base Voltage (VCBO) :

100V

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Collector Emitter Breakdown Voltage :

100V

Collector Emitter Voltage (VCEO) :

100V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

1.2V

Transistor Type :

PNP

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Radiation Hardening :

No

Max Power Dissipation :

1.56W

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Type :

GENERAL PURPOSE

Power - Max :

15W

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Length :

6.8mm

Terminal Finish :

Matte Tin (Sn)

Published :

2012

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

6V

Current - Collector Cutoff (Max) :

1μA

Factory Lead Time :

21 Weeks

Mount :

Surface Mount

Transition Frequency :

3MHz

Pin Count :

4

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

2

hFE Min :

10

Transistor Application :

SWITCHING

Height :

2.4mm