MJD32C
- Mfr.Part #
- MJD32C
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 25,213
- In Stock :
- 25,213
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Base Part Number :
- MJD32
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max) :
- 50μA
- Number of Elements :
- 1
- Power Dissipation :
- 1.56W
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- hFE Min :
- 25
- Gain Bandwidth Product :
- 3MHz
- Published :
- 2001
- Operating Temperature :
- -65°C~150°C TJ
- Length :
- 6.7056mm
- Collector Emitter Voltage (VCEO) :
- 100V
- JESD-30 Code :
- R-PSSO-G2
- Collector Base Voltage (VCBO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- -100V
- REACH SVHC :
- No SVHC
- Height :
- 2.3876mm
- Collector Emitter Saturation Voltage :
- 1.2V
- Width :
- 6.223mm
- Current Rating :
- -3A
- Frequency :
- 3MHz
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Max Power Dissipation :
- 1.56W
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 8 Weeks
- Number of Pins :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Collector Current :
- 3A
- Radiation Hardening :
- No
- Packaging :
- Tube
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 3
- Transistor Application :
- AMPLIFIER
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 3MHz
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- MJD32C
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PNP -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD32CG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
MJD32CG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CG Applications
There are a lot of ON Semiconductor
MJD32CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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