MJD31T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

40V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

50μA

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Width :

6.22mm

Base Part Number :

MJD31

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Case Connection :

COLLECTOR

Current Rating :

3A

Published :

2005

JESD-30 Code :

R-PSSO-G2

hFE Min :

25

Collector Base Voltage (VCBO) :

40V

Max Breakdown Voltage :

40V

Collector Emitter Saturation Voltage :

1.2V

Transition Frequency :

3MHz

Surface Mount :

yes

Length :

6.73mm

Height :

2.38mm

Gain Bandwidth Product :

3MHz

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

40V

Frequency :

3MHz

Operating Temperature :

-65°C~150°C TJ

Radiation Hardening :

No

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Voltage - Rated DC :

40V

Max Collector Current :

3A

Pin Count :

3

Max Power Dissipation :

1.56W

Power Dissipation :

1.56W

Polarity/Channel Type :

NPN

JESD-609 Code :

e3