MJD31CT4-A
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- Mfr.Part #
- MJD31CT4-A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A DPAK
- Stock
- 15,272
- In Stock ：
- 15,272
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Max Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Power Dissipation :
- 15W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Terminal Finish :
- Matte Tin (Sn)
- Collector Base Voltage (VCBO) :
- 100V
- Base Part Number :
- MJD31
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Pin Count :
- 3
- Number of Terminations :
- 2
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Collector Cutoff (Max) :
- 50μA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 15W
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 3A
- Radiation Hardening :
- No
- Datasheets
- MJD31CT4-A
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NPN 150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD31CT4-A Overview
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
MJD31CT4-A Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
MJD31CT4-A Applications
There are a lot of STMicroelectronics
MJD31CT4-A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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