MJD31CQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

1μA

Time@Peak Reflow Temperature-Max (s) :

40

Reference Standard :

AEC-Q101

Terminal Position :

Single

Additional Feature :

High Reliability

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN

Number of Elements :

1

Max Power Dissipation :

15W

Transistor Type :

NPN

Terminal Finish :

Matte Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Packaging :

Tape and Reel (TR)

Published :

2005

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

1.2V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Factory Lead Time :

13 Weeks

Collector Emitter Breakdown Voltage :

100V

Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Transition Frequency :

3MHz

Power - Max :

15W

Max Breakdown Voltage :

100V

Number of Terminations :

2

ECCN Code :

EAR99

Max Collector Current :

3A

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

3MHz

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63