MJD112TF

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Mfr.Part #
MJD112TF
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN DARL 100V 2A DPAK
Stock
6,238
In Stock :
6,238

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Rated DC :
100V
Collector Emitter Saturation Voltage :
2V
Terminal Form :
Gull wing
Transistor Type :
NPN - Darlington
Base Part Number :
MJD112
Collector Emitter Breakdown Voltage :
100V
Collector Base Voltage (VCBO) :
100V
Published :
2013
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
260.37mg
Max Power Dissipation :
1.75W
Frequency - Transition :
25MHz
hFE Min :
1000
Element Configuration :
Single
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins :
3
Current - Collector Cutoff (Max) :
20μA
Height :
2.3mm
Mount :
Surface Mount
Polarity :
NPN
Pbfree Code :
yes
Power Dissipation :
1.75W
Peak Reflow Temperature (Cel) :
260
Width :
6.1mm
Number of Terminations :
2
Collector Emitter Voltage (VCEO) :
100V
Max Collector Current :
2A
Transistor Element Material :
SILICON
Factory Lead Time :
4 Weeks
ECCN Code :
EAR99
Max Breakdown Voltage :
100V
Length :
6.6mm
Vce Saturation (Max) @ Ib, Ic :
3V @ 40mA, 4A
RoHS Status :
RoHS Compliant
Transition Frequency :
25MHz
Emitter Base Voltage (VEBO) :
5V
Lead Free :
Lead Free
JESD-609 Code :
e3
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 2A 3V
REACH SVHC :
No SVHC
Packaging :
Tape and Reel (TR)
Operating Temperature :
150°C TJ
Contact Plating :
Tin
Current Rating :
2A
JESD-30 Code :
R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) :
30
Mounting Type :
Surface Mount
Radiation Hardening :
No
Number of Elements :
1
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 5 days ago)
Datasheets
MJD112TF
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD112TF from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJD112, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Number of Terminations:2, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, MJD112TF pinout, MJD112TF datasheet PDF, MJD112TF amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD112TF ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD112TF


NPN - Darlington 150°C TJ 20μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD112TF Overview


In this device, the DC current gain is 1000 @ 2A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 40mA, 4A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

MJD112TF Features


the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz


MJD112TF Applications


There are a lot of ON Semiconductor
MJD112TF applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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