MJD117
- Mfr.Part #
- MJD117
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A DPAK
- Stock
- 26,227
- In Stock :
- 26,227
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Current Rating :
- -2A
- Element Configuration :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Continuous Collector Current :
- 2A
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 20μA
- Transition Frequency :
- 25MHz
- Max Power Dissipation :
- 1.75W
- Number of Elements :
- 1
- Max Collector Current :
- 2A
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Width :
- 6.22mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Length :
- 6.73mm
- Published :
- 2005
- Halogen Free :
- Halogen Free
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Frequency - Transition :
- 25MHz
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- MJD117
- Transistor Type :
- PNP - Darlington
- Voltage - Rated DC :
- -100V
- Operating Temperature :
- -65°C~150°C TJ
- Polarity :
- PNP
- Power Dissipation :
- 1.75W
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 2V
- Collector Base Voltage (VCBO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- ECCN Code :
- EAR99
- Height :
- 2.38mm
- Datasheets
- MJD117

PNP - Darlington -65°C~150°C TJ 20μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD117G Overview
In this device, the DC current gain is 1000 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).25MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.
MJD117G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
MJD117G Applications
There are a lot of ON Semiconductor
MJD117G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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