MJD117

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

25MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Radiation Hardening :

No

JESD-609 Code :

e3

Max Power Dissipation :

1.75W

Halogen Free :

Halogen Free

Mount :

Surface Mount

Power Dissipation :

1.75W

Polarity :

PNP

Transition Frequency :

25MHz

Transistor Element Material :

SILICON

Element Configuration :

Single

Current Rating :

-2A

Max Collector Current :

2A

Operating Temperature :

-65°C~150°C TJ

ECCN Code :

EAR99

Number of Elements :

1

Height :

2.38mm

Terminal Form :

Gull wing

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

100V

Collector Emitter Voltage (VCEO) :

100V

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Factory Lead Time :

2 Weeks

Continuous Collector Current :

2A

Base Part Number :

MJD117

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

100V

Transistor Type :

PNP - Darlington

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Collector Emitter Saturation Voltage :

2V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Pbfree Code :

yes

Length :

6.73mm

Time@Peak Reflow Temperature-Max (s) :

40

Width :

6.22mm

Number of Pins :

3

Voltage - Rated DC :

-100V

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

20μA