MJD112RLG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Transistor Application :

SWITCHING

Height :

2.38mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Terminations :

2

Terminal Form :

Gull wing

Radiation Hardening :

No

Number of Elements :

1

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Current Rating :

2A

Max Collector Current :

2A

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

100V

Continuous Collector Current :

2A

Width :

6.22mm

Case Connection :

COLLECTOR

Transition Frequency :

25MHz

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Voltage - Rated DC :

100V

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

100V

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

1.75W

Frequency - Transition :

25MHz

Base Part Number :

MJD112

Max Breakdown Voltage :

100V

ECCN Code :

EAR99

Pbfree Code :

yes

Pin Count :

3

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Collector Cutoff (Max) :

20μA

Operating Temperature :

-65°C~150°C TJ

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Transistor Type :

NPN - Darlington

Length :

6.73mm

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

100V

Emitter Base Voltage (VEBO) :

5V

Published :

2006

Factory Lead Time :

8 Weeks