MJD112RL

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

100V

Collector Emitter Saturation Voltage :

2V

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Factory Lead Time :

8 Weeks

JESD-609 Code :

e3

ECCN Code :

EAR99

Max Breakdown Voltage :

100V

Lead Free :

Lead Free

Halogen Free :

Halogen Free

Frequency - Transition :

25MHz

Emitter Base Voltage (VEBO) :

5V

JESD-30 Code :

R-PSSO-G2

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Transition Frequency :

25MHz

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Base Part Number :

MJD112

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

COLLECTOR

Radiation Hardening :

No

Element Configuration :

Single

Transistor Type :

NPN - Darlington

Collector Base Voltage (VCBO) :

100V

Surface Mount :

yes

Voltage - Rated DC :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Continuous Collector Current :

2A

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Height :

2.38mm

Width :

6.22mm

Collector Emitter Voltage (VCEO) :

100V

Published :

2006

Terminal Form :

Gull wing

Contact Plating :

Tin

Max Collector Current :

2A

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Length :

6.73mm

Transistor Element Material :

SILICON

Operating Temperature :

-65°C~150°C TJ

Max Power Dissipation :

1.75W

Current Rating :

2A

Number of Terminations :

2

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Current - Collector Cutoff (Max) :

20μA