MJD112RL

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Transistor Type :

NPN - Darlington

Max Breakdown Voltage :

100V

Collector Emitter Saturation Voltage :

2V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Time@Peak Reflow Temperature-Max (s) :

40

Width :

6.22mm

Radiation Hardening :

No

Polarity :

NPN

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Collector Base Voltage (VCBO) :

100V

Terminal Form :

Gull wing

Length :

6.73mm

Max Collector Current :

2A

Height :

2.38mm

Pin Count :

3

Max Power Dissipation :

1.75W

Number of Elements :

1

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Collector Current :

2A

Element Configuration :

Single

Voltage - Rated DC :

100V

Operating Temperature :

-65°C~150°C TJ

Frequency - Transition :

25MHz

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

100V

Emitter Base Voltage (VEBO) :

5V

Transition Frequency :

25MHz

Mounting Type :

Surface Mount

Current Rating :

2A

Base Part Number :

MJD112

Factory Lead Time :

8 Weeks

Current - Collector Cutoff (Max) :

20μA

Lead Free :

Lead Free

Published :

2006

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Case Connection :

COLLECTOR

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A