MJD112G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Height :

2.38mm

Transistor Element Material :

SILICON

Max Power Dissipation :

1.75W

Continuous Collector Current :

2A

Current Rating :

2A

Number of Terminations :

2

ECCN Code :

EAR99

Number of Pins :

3

Collector Base Voltage (VCBO) :

100V

Number of Elements :

1

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

1.75W

Current - Collector Cutoff (Max) :

20μA

Collector Emitter Voltage (VCEO) :

100V

Voltage - Rated DC :

100V

Base Part Number :

MJD112

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

2V

Length :

6.73mm

Radiation Hardening :

No

Terminal Form :

Gull wing

Published :

2005

Operating Temperature :

-65°C~150°C TJ

Transistor Type :

NPN - Darlington

Surface Mount :

yes

Width :

6.22mm

Factory Lead Time :

8 Weeks

Element Configuration :

Single

Polarity :

NPN

Halogen Free :

Halogen Free

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

COLLECTOR

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Contact Plating :

Tin

Packaging :

Tube

hFE Min :

1000

Pin Count :

3

Transition Frequency :

25MHz

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

25MHz

Collector Emitter Breakdown Voltage :

100V

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Max Collector Current :

2A