MJD112-1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Length :

6.73mm

Polarity :

NPN

ECCN Code :

EAR99

Packaging :

Tube

Max Collector Current :

2A

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Transistor Element Material :

SILICON

Transition Frequency :

25MHz

Frequency - Transition :

25MHz

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Case Connection :

COLLECTOR

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

100V

Number of Elements :

1

Pin Count :

4

Collector Base Voltage (VCBO) :

100V

Collector Emitter Saturation Voltage :

2V

Halogen Free :

Halogen Free

Mounting Type :

Through Hole

Published :

2005

Collector Emitter Breakdown Voltage :

100V

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

20μA

Continuous Collector Current :

2A

Number of Pins :

4

Width :

2.38mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Peak Reflow Temperature (Cel) :

260

Height :

6.22mm

REACH SVHC :

No SVHC

Voltage - Rated DC :

100V

JESD-609 Code :

e3

Pbfree Code :

yes

Max Power Dissipation :

20W

Base Part Number :

MJD112

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-65°C~150°C TJ

Factory Lead Time :

8 Weeks

JESD-30 Code :

R-PSIP-T3

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Power Dissipation :

1.75W

Surface Mount :

No

Transistor Type :

NPN - Darlington

Current Rating :

2A

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A