MJD112T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-30 Code :

R-PSSO-G2

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

100V

Polarity :

NPN

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

Width :

6.22mm

Current Rating :

2A

Surface Mount :

yes

Transition Frequency :

25MHz

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

100V

Continuous Collector Current :

2A

Transistor Element Material :

SILICON

Pbfree Code :

yes

Operating Temperature :

-65°C~150°C TJ

Number of Pins :

3

Radiation Hardening :

No

Max Collector Current :

2A

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Collector Base Voltage (VCBO) :

100V

REACH SVHC :

No SVHC

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

ECCN Code :

EAR99

Base Part Number :

MJD112

Halogen Free :

Halogen Free

Max Breakdown Voltage :

100V

Current - Collector Cutoff (Max) :

20μA

Published :

2005

Number of Elements :

1

Factory Lead Time :

8 Weeks

Emitter Base Voltage (VEBO) :

5V

Height :

2.38mm

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Collector Emitter Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

2V

Mounting Type :

Surface Mount

Frequency - Transition :

25MHz

Max Power Dissipation :

20W

Lead Free :

Lead Free

Number of Terminations :

2

Length :

6.73mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)