MJD117-001

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Continuous Collector Current :

2A

Element Configuration :

Single

Published :

2009

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Qualification Status :

Not Qualified

JESD-609 Code :

e0

Collector Emitter Saturation Voltage :

2V

Collector Emitter Voltage (VCEO) :

100V

Pin Count :

3

Max Collector Current :

2A

Mounting Type :

Through Hole

Power Dissipation :

20W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Pins :

3

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

240

Lead Free :

Contains Lead

Max Power Dissipation :

1.75W

Emitter Base Voltage (VEBO) :

5V

Current Rating :

-2A

ECCN Code :

EAR99

Polarity :

PNP

Transistor Type :

PNP - Darlington

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Collector Emitter Breakdown Voltage :

100V

Case Connection :

COLLECTOR

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Frequency - Transition :

25MHz

Operating Temperature :

-65°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Transition Frequency :

25MHz

Voltage - Rated DC :

-100V

Collector Base Voltage (VCBO) :

100V

Current - Collector Cutoff (Max) :

20μA

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Number of Terminations :

3

Base Part Number :

MJD117