MJD112TF
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- Mfr.Part #
- MJD112TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A DPAK
- Stock
- 6,238
- In Stock ：
- 6,238
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Transistor Type :
- NPN - Darlington
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Polarity :
- NPN
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Power Dissipation :
- 1.75W
- Base Part Number :
- MJD112
- Max Breakdown Voltage :
- 100V
- Current Rating :
- 2A
- Width :
- 6.1mm
- Collector Emitter Saturation Voltage :
- 2V
- Height :
- 2.3mm
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- REACH SVHC :
- No SVHC
- Frequency - Transition :
- 25MHz
- Weight :
- 260.37mg
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 20μA
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Published :
- 2013
- Length :
- 6.6mm
- Max Collector Current :
- 2A
- Collector Base Voltage (VCBO) :
- 100V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- Element Configuration :
- Single
- Voltage - Rated DC :
- 100V
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- hFE Min :
- 1000
- Number of Terminations :
- 2
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Transition Frequency :
- 25MHz
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Power Dissipation :
- 1.75W
- Datasheets
- MJD112TF
NPN - Darlington 150°C TJ 20μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD112TF Overview
In this device, the DC current gain is 1000 @ 2A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 40mA, 4A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
MJD112TF Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz
MJD112TF Applications
There are a lot of ON Semiconductor
MJD112TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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