MJD112TF
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- Mfr.Part #
- MJD112TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A DPAK
- Stock
- 6,238
- In Stock ：
- 6,238
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Base Voltage (VCBO) :
- 100V
- Transition Frequency :
- 25MHz
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lead Free :
- Lead Free
- Current Rating :
- 2A
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Power Dissipation :
- 1.75W
- Max Collector Current :
- 2A
- Collector Emitter Saturation Voltage :
- 2V
- Polarity :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 6.1mm
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 20μA
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Length :
- 6.6mm
- Max Breakdown Voltage :
- 100V
- Frequency - Transition :
- 25MHz
- hFE Min :
- 1000
- Published :
- 2013
- Height :
- 2.3mm
- Weight :
- 260.37mg
- JESD-609 Code :
- e3
- Transistor Type :
- NPN - Darlington
- Voltage - Rated DC :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 1.75W
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- Base Part Number :
- MJD112
- Datasheets
- MJD112TF
NPN - Darlington 150°C TJ 20μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD112TF Overview
In this device, the DC current gain is 1000 @ 2A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 40mA, 4A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
MJD112TF Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz
MJD112TF Applications
There are a lot of ON Semiconductor
MJD112TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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