KSA1156YS
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- Mfr.Part #
- KSA1156YS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 400V 0.5A TO126-3
- Stock
- 25,904
- In Stock ：
- 25,904
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- -7V
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- KSA1156
- Collector Emitter Breakdown Voltage :
- 400V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Collector Emitter Voltage (VCEO) :
- 400V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Weight :
- 761mg
- Max Collector Current :
- 500mA
- Factory Lead Time :
- 6 Weeks
- Current Rating :
- -500mA
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- hFE Min :
- 30
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Turn Off Time-Max (toff) :
- 5000ns
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Power Dissipation :
- 1W
- Voltage - Rated DC :
- -400V
- Collector Emitter Saturation Voltage :
- -1V
- Max Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- -400V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 10mA, 100mA
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Packaging :
- Bulk
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Datasheets
- KSA1156YS
PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
KSA1156YS Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 500mA volts.
KSA1156YS Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at -7V
the current rating of this device is -500mA
KSA1156YS Applications
There are a lot of ON Semiconductor
KSA1156YS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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